Week 7

Meeting Purpose:       Tutorial exercises of voltage divider bias, CE BJT small-signal amplifier
Meeting Date:             19/3/2021 (Friday)
Meeting Time:             9.00PM
Meeting Location:       MS Teams Platform
Meeting Facilitator:    Muhammad Firdaus bin Khalid
Attendees:                    Mohamad Saifullah bin Zolkefly, Muhammad Nasir bin Aziz

Decision Made:

Discussion:

Voltage divider biasing configuration is the most widely used transistor biasing method. The emitter diode of the transistor is forward biased by the voltage value developed across resistor RB2. Also, voltage divider network biasing makes the transistor circuit independent of changes in beta as the biasing voltages set at the transistors base, emitter, and collector terminals are not dependent on external circuit values. To calculate the voltage developed across resistor RB2 and therefore the voltage applied to the base terminal we simply use the voltage divider formula for resistors in series.

We make a calculation to get the value of dc characteristics by using formula. To make sure the value of calculation is true so we construct the circuit of BJT small-signal amplifier in multisim and the result of IB, IC, IE and VCE almost same compare with calculation value.

Conclusion:

This week we know the how voltage divider bias is working. We also have learned how to calculate the dc & ac characteristics which is IB, IC, IE and VCE by using calculation and simulation.

Updated by: Muhammad Firdaus bin Khalid